View HMF2M32M8G_634433.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

HANBit
HMF2M32M8G
FLASH-ROM MODULE 8MByte (2M x 32-Bit), 72pin-SIMM, 5V Part No. HMF2M32M8G GENERAL DESCRIPTION
The HMF2M32M8G is a high-speed flash read only memory (FROM) module containing 2,097,152 words organized in a x32bit configuration. The module consists of eight 1M x 8 FROM mounted on a 72 -pin, double-sided, FR4-printed circuit board. 2 The HMF2M32M8 is entirely pin and command set compatible with JEDEC standard 4M -bit E PROMs. Commands are written to the command register using standard microprocessor write timings. Register contents serve as input to an internal state-machine, which controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device is similar to reading from 12.0V flash or EPROM devices. Eight chip enable inputs, (/CE_UU1, /CE_UM1, /CE_LM1, /CE_LL1, /CE_UU2, /CE_UM2, /CE_LM2, /CE_LL2) are used to enable the module's 4 bytes independently. Output enable (/OE) and write enable (/WE) can set the memory input and output. When FROM module is disable condition the module is becoming power standby mode, system designer can get low -power design. All module components may be powered from a single +5V DC power supply and all inputs and outputs are TTL compatible.
PIN ASSIGNMENT FEATURES
w Access time : 75, 90 and 120ns w High-density 8MByte design w High-reliability, low-power design w Single + 5V 0.5V power supply w Easy memory expansion w All inputs and outputs are TTL-compatible w FR4-PCB design w Low profile 72-pin SIMM w Minimum 1,000,000 write/erase cycle w Sectors erase architecture w Sector group protection w Temporary sector group unprotection w The used device is Am29F080B PIN 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 SYMBOL Vss A3 A2 A1 A0 Vcc A11 /OE A10 /RESET /CE_LL2 /CE_LL1 DQ7 DQ0 DQ1 DQ2 DQ6 DQ5 DQ4 DQ3 /WE A17 A14 A13 PIN 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 SYMBOL NC DQ8 DQ9 DQ10 /CE_LM2 Vcc /CE_LM1 DQ15 DQ14 DQ13 DQ12 DQ11 A18 A16 Vss A6 /RY_BY A5 A4 Vcc /CE_UM2 /CE_UM1 DQ23 DQ16 PIN 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 SYMBOL DQ17 DQ18 DQ22 DQ21 DQ20 DQ19 A19 A15 A12 A7 Vcc A8 A9 DQ24 DQ25 DQ26 /CE_UU2 /CE_UU1 DQ31 DQ30 DQ29 DQ28 DQ27 Vss
OPTIONS
w Timing 75ns access 90ns access 120ns access w Packages 72-pin SIMM
MARKING
-75 -90 -120
17 18 19 20 21 22 23 24
M
72-PIN SIMM
URL: www.hbe.co.kr REV.02(August,2002)
TOP VIEW
HANBit Electronics Co., Ltd.
1
HANBit
FUNCTIONAL BLOCK DIAGRAM
32 20
HMF2M32M8G
DQ 0-DQ31 DQ 0-31 A0-A19
A0-19
A0-19 DQ0-7 /WE /OE /CE-LL1
A0-19 DQ0-7 /WE /OE
U1
/CE /CE-LL2
U5
/CE
A0-19 DQ8-15 /WE /OE
A0-19 DQ8-15 /WE /OE
U2
/CE
U6
/CE
/CE-LM1
/CE-LM2
A0-19 DQ16-23 /WE /OE /WE A0-19
DQ 16-23
U3
/CE /CE-UM2
/OE
U7
/CE
/CE-UM1
A0-19 /WE /WE /OE /OE DQ24-31 /WE
A0-19 DQ24-31 /WE /OE
U4
/CE
/OE
U8
/CE
/CE-UU1
/CE-UU2
TRUTH TABLE
MODE STANDBY NOT SELECTED READ WRITE or ERASE NOTE: X means don't care
URL: www.hbe.co.kr REV.02(August,2002)
/OE X H L X
/CE H L L L
/WE X H H L
DQ HIGH-Z HIGH-Z Q D
POWER STANDBY ACTIVE ACTIVE ACTIVE
2
HANBit Electronics Co., Ltd.
HANBit
ABSOLUTE MAXIMUM RATINGS
PARAMETER Voltage with respect to ground all other pins Voltage with respect to ground Vcc Storage Temperature Operating Temperature SYMBOL VIN,OUT VCC TSTG TA
HMF2M32M8G
RATING -2.0V to +7.0V -2.0V to +7.0V -65oC to +125oC -55oC to +125 oC
Power Dissapation PD 8W w Stresses greater than those listed under " Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS
PARAMETER Vcc for 5% device Supply Voltages Vcc for 10% device Supply Voltages Ground SYMBOL VCC Vcc VSS MIN 4.75V 4.5V 0 0 TYP. MAX 5.25V 5.5V 0
DC AND OPERATING CHARACTERISTICS (0oC TA 70 oC ; Vcc = 5V 0.5V )
PARAMETER Input Leakage Current Output Leakage Current Output High Voltage Output Low Voltage Vcc Active Current for Read(1) Vcc Active Current for Program /CE = VIL, /OE=VIH or Erase(2) Vcc Standby Current Low Vcc Lock-Out Voltage Notes: 1. The Icc current listed is typically less than 2mA/MHz, with /OE at V IH. 2. Icc active while embedded algorithm (program or erase) is in progress 3. Maximum Icc current specifications are tested with Vcc=Vcc max /CE= VIH ICC3 VLKO 3.2 1.0 4.2 mA V ICC2 60 mA TEST CONDITIONS Vcc=Vcc max, V IN= GND to Vcc Vcc=Vcc max, VOUT= GND to Vcc IOH = -2.5mA, Vcc = Vcc min IOL = 12mA, Vcc =Vcc min /CE = VIL, /OE=VIH, SYMBOL IL1 IL0 VOH VOL ICC1 2.4 0.45 40 MIN MAX 1.0 1.0 UNITS A A V V mA
ERASE AND PROGRAMMING PERFORMANCE
LIMITS PARAMETER MIN. Sector Erase Time TYP. 1 MAX. Excludes 00H programming 8 sec prior to erasure
URL: www.hbe.co.kr REV.02(August,2002)
UNIT
COMMENTS
3
HANBit Electronics Co., Ltd.
HANBit
Byte Programming Time Chip Programming Time 7 7.2 300 21.6 s sec
HMF2M32M8G
Excludes system-level overhead Excludes system-level overhead
CAPACITANCE
PARAMETER SYMBOL CIN COUT CIN2 PARAMETER TEST SETUP DESCRIPTION Input Capacitance Output Capacitance Control Pin Capacitance
o
MIN 6 8.5 7.5
MAX 7.5 12 9
UNIT pF pF pF
VIN = 0 VOUT = 0 VIN = 0
Notes : Test conditions TA = 25 C, f=1.0 MHz.
AC CHARACTERISTICS u Read Only Operations Characteristics
PARAMETER SYMBOLS JEDEC tAVAV tAVQV STANDARD tRC tACC Address to Output Delay /OE = VIL tELQV tGLQV tEHQZ tGHQZ tAXQX tCE tOE tDF tDF tQH /CE or /OE, Whichever Occurs First Chip Enable to Output Delay Chip Enable to Output Delay Chip Enable to Output High-Z Output Enable to Output High-Z Output Hold Time From Addresses, Min 0 0 ns /OE = VIL Max Max Max Max 70 40 20 20 90 40 20 20 ns ns ns ns Read Cycle Time /CE = V IL Max 70 90 ns Min 70 90 ns DESCRIPTION TEST SETUP -75 -90 UNIT
TEST SPECIFICATIONS
TEST CONDITION Output load Output load capacitance, 30 CL (Including jig capacitance) Input rise and full times Input pulse levels Input timing measurement reference levels Output timing measurement reference levels 5 0.0 - 3.0 1.5 1.5 20 0.45-2.4 0.8, 2.0 0.8, 2.0 ns V V V 100 pF 75 ALL OTHERS 1TTL gate UNIT
URL: www.hbe.co.kr REV.02(August,2002)
4
HANBit Electronics Co., Ltd.
HANBit
5.0V
HMF2M32M8G
2.7k Device Under Test CL IN3064 or Equivalent
6.2k
Diodes = IN3064 or Equivalent
Note : CL = 100pF including jig capacitance
u Erase/Program Operations
PARAMETER SYMBOLS JEDEC tAVAV tAVWL tWLAX tDVWH tWHDX STANDARD tWC tAS tAH tDS tDH tOES tGHWL tELWL tWHEH tWLWH tWHWL tWHWH1 tWHWH2 tGHWL tCS tCH tWP tWPH tWHWH1 tWHWH2 tVCS Notes : 1. This does not include the preprogramming time 2. This timing is only for Sector Protect operations Write Cycle Time Address Setup Time Address Hold Time Data Setup Time Data Hold Time Output Enable Setup Time Read Recover Time Before Write /CE Setup Time /CE Hold Time Write Pulse Width Write Pulse Width High Byte Programming Operation Sector Erase Operation (Note1) Vcc set up time Min Min Min Min Min Min Min Min Min Min Min Typ Typ Min 70 0 40 40 0 0 0 0 0 40 20 7 1 50 90 0 45 45 0 0 0 0 0 45 20 7 1 50 ns ns ns ns ns ns ns ns ns ns ns s sec s DESCRIPTION -75 -90 UNIT
URL: www.hbe.co.kr REV.02(August,2002)
5
HANBit Electronics Co., Ltd.
HANBit
u Erase/Program Operations Alternate /CE Controlled Writes
PARAMETER SYMBOLS DESCRIPTION JEDEC tAVAV tAVWL tWLAX tDVWH tWHDX STANDARD tWC tAS tAH tDS tDH tOES tGHWL tELWL tWHEH tWLWH tWHWL tWHWH1 tWHWH2 Notes : 1. This does not include the preprogramming time 2. This timing is only for Sector Protect operations tGHWL tCS tCH tWP tWPH tWHWH1 tWHWH2 Write Cycle Time Address Setup Time Address Hold Time Data Setup Time Data Hold Time Output Enable Setup Time Read Recover Time Before Write /CE Setup Time /CE Hold Time Write Pulse Width Write Pulse Width High Byte Programming Operation Sector Erase Operation (Note1) Min Min Min Min Min Min Min Min Min Min Min Typ Typ
HMF2M32M8G
-75 70 0 40 40 0 0 0 0 0 40 20 7 1
-90 90 0 45 45 0 0 0 0 0 45 20 7 1
UNIT ns ns ns ns ns ns ns ns ns ns ns s sec
URL: www.hbe.co.kr REV.02(August,2002)
6
HANBit Electronics Co., Ltd.
HANBit
u READ OPERATIONS TIMING
HMF2M32M8G
u RESET TIMING
URL: www.hbe.co.kr REV.02(August,2002)
7
HANBit Electronics Co., Ltd.
HANBit
u PROGRAM OPERATIONS TIMING
HMF2M32M8G
u CHIP/SECTOR ERASE OPERATION TIMINGS
URL: www.hbe.co.kr REV.02(August,2002)
8
HANBit Electronics Co., Ltd.
HANBit
u DATA# POLLING TIMES(DURING EMBEDDED ALGORITHMS)
HMF2M32M8G
u TOGGLE# BIT TIMINGS (DURING EMBEDDED ALGORITHMS)
URL: www.hbe.co.kr REV.02(August,2002)
9
HANBit Electronics Co., Ltd.
HANBit
u SECTOR PROTECT UNPROTECT TIMEING DIAGRAM
HMF2M32M8G
u ALTERNATE CE# CONTROLLED WRITE OPERATING TIMINGS
URL: www.hbe.co.kr REV.02(August,2002)
10
HANBit Electronics Co., Ltd.
HANBit
PACKAGE DIMENSIONS
HMF2M32M8G
108mm 3.2 mm
6.35 mm
1
72
2.03 mm 1.02 mm 6.35 mm 95.25 mm 1.27 mm 3.34 mm
2.54 mm 0.25 mm MAX MIN
Gold: 1.040.10 mm 1.27 mm Solder: 0.9140.10 mm
1.290.08 mm
-
(Solder & Gold Plating)
ORDERING INFORMATION
Part Number
Density
Org.
Package
Component Number 8EA 8EA 8EA
Vcc
SPEED
HMF2M32M8G-75 HMF2M32M8G-90 HMF2M32M8G-120
8MByte 8MByte 8MByte
2Mx32bit 2Mx32bit 2Mx32bit
72Pin-SIMM 72Pin-SIMM 72Pin-SIMM
5.0V 5.0V 5.0V
75ns 90ns 120ns
URL: www.hbe.co.kr REV.02(August,2002)
11
HANBit Electronics Co., Ltd.

▲Up To Search▲

Price & Availability of HMF2M32M8G

	To Download HMF2M32M8G Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .